Volume 1, Number 2 (2023)

The Potential Integration Of Ba2InSbO6 Double Perovskite Oxides For Electronic Devices Fabrication

Ben?Nana, Mouad; Abbassi, Abderrahmane; Elhadadi, Benachir
1 Laboratory of Research in Physics and Engineering Sciences, Sultan Moulay Slimane University, Polydisciplinary Faculty, Beni Mellal, 23000, Moroc
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DOI: 10.5281/zenodo.10395655
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Abstract

In the last years double perovskites elements are emerging as possible elements to use for electronic devices fabrication because of their interesting properties. In this study, we explored the ability to develop new electronic devices based on the double perovskite Ba2InSbO6 throw a theoretically investigation of optic and electronic properties using density functional theory as implemented in Wein2k code. The compounds show a semiconductor nature with a direct bandgap of 1.62 eV. Furthermore, the calculated optical properties show that the material is strongly absorb and reflect the incident radiation in the visible and ultraviolet range. Therefore, the Ba2InSbO6 compounds can be effectively used in optoelectronic devices.

Keywords: Perovskites, optoelectronic, Wein2k

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How to Cite

Ben?Nana, Mouad; Abbassi, Abderrahmane; Elhadadi, Benachir. (2023). The Potential Integration Of Ba2InSbO6 Double Perovskite Oxides For Electronic Devices Fabrication. PEEAP Journal, 1(2), 1-10. https://doi.org/10.5281/zenodo.10395655

Copyright: © 2023 Ben?Nana, Mouad et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0).